Welcome to ichome.com!

logo
Home

SIHU6N65E-GE3

SIHU6N65E-GE3

SIHU6N65E-GE3

Vishay Siliconix

MOSFET N-CH 650V 7A IPAK

SOT-23

non-compliant

SIHU6N65E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.87175 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 820 pF @ 100 V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251)
Package / Case TO-251-3 Long Leads, IPak, TO-251AB
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

NTB18N06T4
NTB18N06T4
$0 $/piece
SIHG80N60EF-GE3
G65P06T
G65P06T
$0 $/piece
IRFP4110PBF
STW42N65M5
SI3415A-TP
SIHA12N50E-GE3
SPS01N60C3
APT75M50B2

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.