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G65P06T

G65P06T

G65P06T

P-60V,RD(MAX)<18M@-10V,VTH-2.0V~

SOT-23

non-compliant

G65P06T Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.71000 $1.71
500 $1.6929 $846.45
1000 $1.6758 $1675.8
1500 $1.6587 $2488.05
2000 $1.6416 $3283.2
2500 $1.6245 $4061.25
20 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5814 pF @ 25 V
FET Feature -
Power Dissipation (Max) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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