Welcome to ichome.com!

logo
Home

SIHU3N50D-GE3

SIHU3N50D-GE3

SIHU3N50D-GE3

Vishay Siliconix

MOSFET N-CH 500V 3A TO251

compliant

SIHU3N50D-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.39324 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 100 V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

GKI03039
GKI03039
$0 $/piece
RM4P20ES6
RM4P20ES6
$0 $/piece
SQS482EN-T1_GE3
SIHP5N50D-E3
SISS26LDN-T1-GE3
FDD2570
SQ4401EY-T1_BE3
DMN24H3D5L-13

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.