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RM4P20ES6

RM4P20ES6

RM4P20ES6

Rectron USA

MOSFET P-CH 20V 3A/4.1A SOT23-6

compliant

RM4P20ES6 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.06900 $0.069
500 $0.06831 $34.155
1000 $0.06762 $67.62
1500 $0.06693 $100.395
2000 $0.06624 $132.48
2500 $0.06555 $163.875
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta), 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 52mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 4 V
FET Feature -
Power Dissipation (Max) 1.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-6
Package / Case SOT-23-6
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