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RD3H200SNTL1

RD3H200SNTL1

RD3H200SNTL1

Rohm Semiconductor

MOSFET N-CH 45V 20A TO252

compliant

RD3H200SNTL1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.54628 -
321 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 45 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 10 V
FET Feature -
Power Dissipation (Max) 20W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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