Welcome to ichome.com!

logo
Home

SIHH186N60EF-T1GE3

SIHH186N60EF-T1GE3

SIHH186N60EF-T1GE3

Vishay Siliconix

MOSFET N-CH 600V 16A PPAK 8 X 8

compliant

SIHH186N60EF-T1GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.79000 $4.79
500 $4.7421 $2371.05
1000 $4.6942 $4694.2
1500 $4.6463 $6969.45
2000 $4.5984 $9196.8
2500 $4.5505 $11376.25
17 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 193mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1081 pF @ 100 V
FET Feature -
Power Dissipation (Max) 114W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.