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SQJ412EP-T2_GE3

SQJ412EP-T2_GE3

SQJ412EP-T2_GE3

Vishay Siliconix

MOSFET N-CH 40V 32A PPAK SO-8

compliant

SQJ412EP-T2_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.82764 $0.82764
500 $0.8193636 $409.6818
1000 $0.8110872 $811.0872
1500 $0.8028108 $1204.2162
2000 $0.7945344 $1589.0688
2500 $0.786258 $1965.645
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5950 pF @ 20 V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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