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SIHF12N60E-GE3

SIHF12N60E-GE3

SIHF12N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 12A TO220

compliant

SIHF12N60E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.54245 -
2,000 $1.44235 -
5,000 $1.39230 -
377 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 937 pF @ 100 V
FET Feature -
Power Dissipation (Max) 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
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