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SIR582DP-T1-RE3

SIR582DP-T1-RE3

SIR582DP-T1-RE3

Vishay Siliconix

N-CHANNEL 80 V (D-S) MOSFET POWE

compliant

SIR582DP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.74000 $1.74
500 $1.7226 $861.3
1000 $1.7052 $1705.2
1500 $1.6878 $2531.7
2000 $1.6704 $3340.8
2500 $1.653 $4132.5
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 28.9A (Ta), 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3360 pF @ 40 V
FET Feature -
Power Dissipation (Max) 5.6W (Ta), 92.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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