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SIHD6N62ET1-GE3

SIHD6N62ET1-GE3

SIHD6N62ET1-GE3

Vishay Siliconix

MOSFET N-CH 620V 6A TO252AA

compliant

SIHD6N62ET1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,000 $0.72534 -
6,000 $0.68907 -
10,000 $0.66317 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 578 pF @ 100 V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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