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SIHD5N50D-GE3

SIHD5N50D-GE3

SIHD5N50D-GE3

Vishay Siliconix

MOSFET N-CH 500V 5.3A TO252AA

non-compliant

SIHD5N50D-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.20000 $1.2
10 $1.06300 $10.63
100 $0.84690 $84.69
500 $0.66358 $331.79
1,000 $0.53025 -
3,000 $0.49692 -
6,000 $0.47359 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 100 V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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