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SI4459BDY-T1-GE3

SI4459BDY-T1-GE3

SI4459BDY-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 20.5A/27.8A 8SO

compliant

SI4459BDY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.55760 -
5,000 $0.53142 -
12,500 $0.51272 -
11219 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 20.5A (Ta), 27.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3490 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 5.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
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