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SIHD180N60E-GE3

SIHD180N60E-GE3

SIHD180N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 19A TO252AA

non-compliant

SIHD180N60E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.18000 $3.18
10 $2.83500 $28.35
100 $2.32490 $232.49
500 $1.88260 $941.3
2,000 $1.50836 -
6,000 $1.45165 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 195mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 100 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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