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SI4090DY-T1-GE3

SI4090DY-T1-GE3

SI4090DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 19.7A 8SO

non-compliant

SI4090DY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.70520 -
5,000 $0.67209 -
12,500 $0.64844 -
0 items
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Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 19.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2410 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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