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SIHD14N60ET1-GE3

SIHD14N60ET1-GE3

SIHD14N60ET1-GE3

Vishay Siliconix

N-CHANNEL 600V

non-compliant

SIHD14N60ET1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.40000 $2.4
500 $2.376 $1188
1000 $2.352 $2352
1500 $2.328 $3492
2000 $2.304 $4608
2500 $2.28 $5700
1985 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 309mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1205 pF @ 100 V
FET Feature -
Power Dissipation (Max) 147W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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