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FDMS0355S

FDMS0355S

FDMS0355S

POWER FIELD-EFFECT TRANSISTOR

compliant

FDMS0355S Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.25000 $0.25
500 $0.2475 $123.75
1000 $0.245 $245
1500 $0.2425 $363.75
2000 $0.24 $480
2500 $0.2375 $593.75
6000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1815 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6), Power56
Package / Case 8-PowerTDFN
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