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SIHD12N50E-GE3

SIHD12N50E-GE3

SIHD12N50E-GE3

Vishay Siliconix

MOSFET N-CH 550V 10.5A DPAK

non-compliant

SIHD12N50E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.98000 $1.98
10 $1.78600 $17.86
100 $1.43550 $143.55
500 $1.11650 $558.25
1,000 $0.92510 -
3,000 $0.86130 -
6,000 $0.82940 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 886 pF @ 100 V
FET Feature -
Power Dissipation (Max) 114W (Tc)
Operating Temperature -55°C ~ 150°C (TA)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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