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RQ3E180BNTB

RQ3E180BNTB

RQ3E180BNTB

Rohm Semiconductor

MOSFET N-CHANNEL 30V 39A 8HSMT

non-compliant

RQ3E180BNTB Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.19530 -
6,000 $0.18270 -
15,000 $0.17640 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 20W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3)
Package / Case 8-PowerVDFN
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