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SIHA2N80E-GE3

SIHA2N80E-GE3

SIHA2N80E-GE3

Vishay Siliconix

MOSFET N-CH 800V 2.8A TO220

compliant

SIHA2N80E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $0.87632 -
2,000 $0.81945 -
5,000 $0.79101 -
10,000 $0.77550 -
27 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.6 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 100 V
FET Feature -
Power Dissipation (Max) 29W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
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