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IPI023NE7N3G

IPI023NE7N3G

IPI023NE7N3G

N-CHANNEL POWER MOSFET

compliant

IPI023NE7N3G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.11000 $2.11
500 $2.0889 $1044.45
1000 $2.0678 $2067.8
1500 $2.0467 $3070.05
2000 $2.0256 $4051.2
2500 $2.0045 $5011.25
5746 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 14400 pF @ 37.5 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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