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SIDR610DP-T1-RE3

SIDR610DP-T1-RE3

SIDR610DP-T1-RE3

Vishay Siliconix

N-CHANNEL 200-V (D-S) MOSFET

non-compliant

SIDR610DP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.63000 $2.63
500 $2.6037 $1301.85
1000 $2.5774 $2577.4
1500 $2.5511 $3826.65
2000 $2.5248 $5049.6
2500 $2.4985 $6246.25
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 8.9A (Ta), 39.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 31.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1380 pF @ 100 V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
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