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FDN5618P

FDN5618P

FDN5618P

onsemi

MOSFET P-CH 60V 1.25A SUPERSOT3

non-compliant

FDN5618P Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.19386 -
6,000 $0.18135 -
15,000 $0.16884 -
30,000 $0.16009 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 30 V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
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