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SIB406EDK-T1-GE3

SIB406EDK-T1-GE3

SIB406EDK-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 6A PPAK SC75-6

compliant

SIB406EDK-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.22563 -
6,000 $0.21188 -
15,000 $0.19813 -
30,000 $0.18850 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 46mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.95W (Ta), 10W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-75-6
Package / Case PowerPAK® SC-75-6
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