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HUF76139S3ST

HUF76139S3ST

HUF76139S3ST

N-CHANNEL POWER MOSFET

compliant

HUF76139S3ST Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.46000 $0.46
500 $0.4554 $227.7
1000 $0.4508 $450.8
1500 $0.4462 $669.3
2000 $0.4416 $883.2
2500 $0.437 $1092.5
1950 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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