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SIA811ADJ-T1-GE3

SIA811ADJ-T1-GE3

SIA811ADJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 4.5A PPAK SC70-6

compliant

SIA811ADJ-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.21660 -
6,000 $0.20340 -
15,000 $0.19020 -
30,000 $0.18096 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 116mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 345 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.8W (Ta), 6.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Dual
Package / Case PowerPAK® SC-70-6 Dual
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