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RM80N80HD

RM80N80HD

RM80N80HD

Rectron USA

MOSFET N-CHANNEL 80V 80A TO263-2

compliant

RM80N80HD Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.52000 $0.52
500 $0.5148 $257.4
1000 $0.5096 $509.6
1500 $0.5044 $756.6
2000 $0.4992 $998.4
2500 $0.494 $1235
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 80A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25 V
FET Feature -
Power Dissipation (Max) 170W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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