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SIA414DJ-T1-GE3

SIA414DJ-T1-GE3

SIA414DJ-T1-GE3

Vishay Siliconix

MOSFET N-CH 8V 12A PPAK SC70-6

compliant

SIA414DJ-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.44280 -
6,000 $0.42201 -
15,000 $0.40716 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 11mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 5 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 4 V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
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