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IPD11DP10NMATMA1

IPD11DP10NMATMA1

IPD11DP10NMATMA1

TRENCH >=100V PG-TO252-3

compliant

IPD11DP10NMATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.01000 $2.01
500 $1.9899 $994.95
1000 $1.9698 $1969.8
1500 $1.9497 $2924.55
2000 $1.9296 $3859.2
2500 $1.9095 $4773.75
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 111mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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