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SIA413DJ-T1-GE3

SIA413DJ-T1-GE3

SIA413DJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 12A PPAK SC70-6

non-compliant

SIA413DJ-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.44280 -
6,000 $0.42201 -
15,000 $0.40716 -
17999 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 29mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 10 V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
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