Welcome to ichome.com!

logo
Home

SIR402DP-T1-GE3

SIR402DP-T1-GE3

SIR402DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 35A PPAK SO-8

compliant

SIR402DP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.96685 -
6,000 $0.93330 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 15 V
FET Feature -
Power Dissipation (Max) 4.2W (Ta), 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

IXTH110N25T
IXTH110N25T
$0 $/piece
SI7465DP-T1-GE3
IRFZ14STRLPBF
PMV88ENEAR
PMV88ENEAR
$0 $/piece
MMDF3N02HDR2
MMDF3N02HDR2
$0 $/piece
FDC637BNZ
FDC637BNZ
$0 $/piece
SI4800BDY-T1-E3
FDMA410NZT
FDMA410NZT
$0 $/piece
IRFP4137PBF

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.