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SIA400EDJ-T1-GE3

SIA400EDJ-T1-GE3

SIA400EDJ-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SC70-6

non-compliant

SIA400EDJ-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.24368 -
6,000 $0.22883 -
15,000 $0.21398 -
30,000 $0.20358 -
51000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 19mOhm @ 11A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1265 pF @ 15 V
FET Feature -
Power Dissipation (Max) 19.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
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