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IPB020NE7N3GATMA1

IPB020NE7N3GATMA1

IPB020NE7N3GATMA1

MOSFET N-CH 75V 120A D2PAK

non-compliant

IPB020NE7N3GATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $3.04088 -
2,000 $2.88884 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14400 pF @ 37.5 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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