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SIA108DJ-T1-GE3

SIA108DJ-T1-GE3

SIA108DJ-T1-GE3

Vishay Siliconix

MOSFET N-CH 80V 6.6A/12A PPAK

compliant

SIA108DJ-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.36762 $0.36762
500 $0.3639438 $181.9719
1000 $0.3602676 $360.2676
1500 $0.3565914 $534.8871
2000 $0.3529152 $705.8304
2500 $0.349239 $873.0975
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 38mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 545 pF @ 40 V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
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