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IPTG111N20NM3FDATMA1

IPTG111N20NM3FDATMA1

IPTG111N20NM3FDATMA1

TRENCH >=100V PG-HSOG-8

compliant

IPTG111N20NM3FDATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $9.50000 $9.5
500 $9.405 $4702.5
1000 $9.31 $9310
1500 $9.215 $13822.5
2000 $9.12 $18240
2500 $9.025 $22562.5
1795 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 10.8A (Ta), 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11.1mOhm @ 96A, 10V
Vgs(th) (Max) @ Id 4V @ 267µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 100 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOG-8-1
Package / Case 8-PowerSMD, Gull Wing
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