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SI8817DB-T2-E1

SI8817DB-T2-E1

SI8817DB-T2-E1

Vishay Siliconix

MOSFET P-CH 20V 4MICROFOOT

compliant

SI8817DB-T2-E1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.17493 -
6,000 $0.16365 -
15,000 $0.15236 -
30,000 $0.14446 -
10 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 76mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 615 pF @ 10 V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA
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