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SIHP6N80E-GE3

SIHP6N80E-GE3

SIHP6N80E-GE3

Vishay Siliconix

MOSFET N-CH 800V 5.4A TO220AB

non-compliant

SIHP6N80E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.68000 $2.68
10 $2.42400 $24.24
100 $1.94780 $194.78
500 $1.51498 $757.49
1,000 $1.25527 -
2,500 $1.16870 -
5,000 $1.12541 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 827 pF @ 100 V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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