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SI8800EDB-T2-E1

SI8800EDB-T2-E1

SI8800EDB-T2-E1

Vishay Siliconix

MOSFET N-CH 20V 4MICROFOOT

non-compliant

SI8800EDB-T2-E1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.17272 -
6,000 $0.16157 -
15,000 $0.15043 -
30,000 $0.14263 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 80mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA, CSPBGA
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