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| Name | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 16.4A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 820µA |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3288 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 171W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7-3-10 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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