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SI8481DB-T1-E1

SI8481DB-T1-E1

SI8481DB-T1-E1

Vishay Siliconix

MOSFET P-CH 20V 9.7A 4MICRO FOOT

non-compliant

SI8481DB-T1-E1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.16852 -
6,000 $0.15884 -
15,000 $0.14916 -
30,000 $0.13754 -
75,000 $0.13270 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 21mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-MICRO FOOT® (1.6x1.6)
Package / Case 4-UFBGA
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