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RD3P08BBDTL

RD3P08BBDTL

RD3P08BBDTL

Rohm Semiconductor

MOSFET N-CH 100V 80A TO252

non-compliant

RD3P08BBDTL Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.20000 $3.2
500 $3.168 $1584
1000 $3.136 $3136
1500 $3.104 $4656
2000 $3.072 $6144
2500 $3.04 $7600
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 80A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 11.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1940 pF @ 50 V
FET Feature -
Power Dissipation (Max) 119W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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