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SI8405DB-T1-E1

SI8405DB-T1-E1

SI8405DB-T1-E1

Vishay Siliconix

MOSFET P-CH 12V 3.6A 4MICROFOOT

non-compliant

SI8405DB-T1-E1 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 55mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.47W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA, CSPBGA
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