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IRFI9610G

IRFI9610G

IRFI9610G

Vishay Siliconix

MOSFET P-CH 200V 2A TO220-3

non-compliant

IRFI9610G Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V
FET Feature -
Power Dissipation (Max) 27W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3 Full Pack, Isolated Tab
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