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SI7900AEDN-T1-GE3

SI7900AEDN-T1-GE3

SI7900AEDN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 6A PPAK 1212-8

non-compliant

SI7900AEDN-T1-GE3 Pricing & Ordering

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Name Value
Product Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A
Rds On (Max) @ Id, Vgs 26mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Supplier Device Package PowerPAK® 1212-8 Dual
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