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BSG0813NDIATMA1

BSG0813NDIATMA1

BSG0813NDIATMA1

MOSFET 2N-CH 25V 19A/33A TISON8

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BSG0813NDIATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $1.01930 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 19A, 33A
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 12V
Power - Max 2.5W
Operating Temperature -55°C ~ 155°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PG-TISON-8
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