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SI7892BDP-T1-GE3

SI7892BDP-T1-GE3

SI7892BDP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 15A PPAK SO-8

non-compliant

SI7892BDP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.80138 -
6,000 $0.77357 -
1664 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3775 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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