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SI7862ADP-T1-GE3

SI7862ADP-T1-GE3

SI7862ADP-T1-GE3

Vishay Siliconix

MOSFET N-CH 16V 18A PPAK SO-8

non-compliant

SI7862ADP-T1-GE3 Pricing & Ordering

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3,000 $2.39932 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 16 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 3mOhm @ 29A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 7340 pF @ 8 V
FET Feature -
Power Dissipation (Max) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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