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SI7456DP-T1-GE3

SI7456DP-T1-GE3

SI7456DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 5.7A PPAK SO-8

non-compliant

SI7456DP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.88586 -
6,000 $0.85512 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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