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STB12NM50T4

STB12NM50T4

STB12NM50T4

STMicroelectronics

MOSFET N-CH 550V 12A D2PAK

non-compliant

STB12NM50T4 Pricing & Ordering

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1,000 $2.10210 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 160W (Tc)
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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