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SI7309DN-T1-E3

SI7309DN-T1-E3

SI7309DN-T1-E3

Vishay Siliconix

MOSFET P-CH 60V 8A PPAK1212-8

non-compliant

SI7309DN-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.49200 -
6,000 $0.46890 -
15,000 $0.45240 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 115mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3.2W (Ta), 19.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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