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LND150N8-G

LND150N8-G

LND150N8-G

MOSFET N-CH 500V 30MA SOT89-3

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LND150N8-G Pricing & Ordering

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2,000 $0.46351 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 30mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 0V
Rds On (Max) @ Id, Vgs 1000Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-89-3
Package / Case TO-243AA
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